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| SEMIX101GD12E4S Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE 20 V VCES 1200 V VGES tpsc Tj Inverse diode IF SEMIX101GD12E4S Conditions Values 1200 Unit V A A A A V s C A A A A A C A C V Tj = 175 C Tc = 25 C Tc = 80 C 160 123 100 300 -20 ... 20 SEMiX(R)13 Trench IGBT Modules Tj = 150 C 10 -40 ... 175 Tj = 175 C Tc = 25 C Tc = 80 C 121 91 100 300 550 -40 ... 175 600 -40 ... 125 IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 IFRM IFSM Tj Module It(RMS) Tstg Visol IFRM = 3xIFnom tp = 10 ms, sin 180, Tj = 25 C Typical Applications * AC inverter drives * UPS * Electronic Welding AC sinus 50Hz, t = 1 min 4000 Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) IC = 100 A VGE = 15 V chiplevel Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C VGE = 15 V Tj = 25 C Tj = 150 C 5 Tj = 25 C Tj = 150 C f = 1 MHz f = 1 MHz f = 1 MHz 6.2 0.41 0.34 565 7.50 Tj = 150 C Tj = 150 C Tj = 150 C 187 35 10.8 467 94 13.3 0.27 1.8 2.2 0.8 0.7 10.0 15.0 5.8 0.1 2.05 2.4 0.9 0.8 11.5 16.0 6.5 0.3 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W Conditions min. typ. max. Unit Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C VGE=VCE, IC = 3.8 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C VCC = 600 V IC = 100 A RG on = 1 Tj = 150 C RG off = 1 di/dton = 3100 A/s Tj = 150 C di/dtoff = 1200 A/s Tj = 150 C per IGBT GD (c) by SEMIKRON Rev. 1 - 20.02.2009 1 SEMIX101GD12E4S Characteristics Symbol Conditions Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C rF Tj = 25 C Tj = 150 C IF = 100 A Tj = 150 C di/dtoff = 3000 A/s T = 150 C j VGE = -15 V Tj = 150 C VCC = 600 V per diode 1.1 0.7 8.0 10.5 min. typ. 2.2 2.1 1.3 0.9 9.0 12.5 95 16 6.5 max. 2.52 2.5 1.5 1.1 10.2 13.7 Unit V V V V m m A C mJ Inverse diode VF = VEC IF = 100 A VGE = 0 V chip VF0 SEMiX(R)13 Trench IGBT Modules SEMIX101GD12E4S IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.48 20 K/W nH m m K/W Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Rth(c-s) Ms Mt w res., terminal-chip per module to heat sink (M5) TC = 25 C TC = 125 C 3 to terminals (M6) 2.5 0.7 1 0.04 5 5 350 Nm Nm Nm g K Typical Applications * AC inverter drives * UPS * Electronic Welding Temperatur Sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 5% 3550 2% Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C GD 2 Rev. 1 - 20.02.2009 (c) by SEMIKRON SEMIX101GD12E4S Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 1 - 20.02.2009 3 SEMIX101GD12E4S Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 1 - 20.02.2009 (c) by SEMIKRON SEMIX101GD12E4S SEMiX 13 GD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON Rev. 1 - 20.02.2009 5 |
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